View AD8354ACP-R2_954478.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

rev. a information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective companies. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781/329-4700 www.analog.com fax: 781/326-8703 ? 2003 analog devices, inc. all rights reserved. ad8354 100 mhz to 2.7 ghz rf gain block features fixed gain of 20 db operational frequency of 100 mhz to 2.7 ghz linear output power-up to 4 dbm input/output internally matched to 50 temperature and power supply stable noise figure 4.2 db power supply 3 v or 5 v applications vco buffers general tx/rx amplification power amplifier predriver low power antenna driver functional block diagram bias and vref com1 inpt vout vpos com2 ad8354 general description the ad8354 is a broadband, fixed-gain linear amplifier that operates at frequencies from 100 mhz up to 2.7 ghz. it is intended for use in a wide variety of wireless devices including cellular, broadband, catv, and lmds/mmds applications. by taking advantage of analog devices?high performance complementary si bipolar process, these gain blocks provide excellent stability over process, temperature, and power supply. this amplifier is single-ended and internally matched to 50 ? with a return loss of greater than 10 db over the full operating frequency range. the ad8354 provides linear output power of nearly 4.3 dbm with 20 db of gain at 900 mhz when biased at 3 v and an external rf choke is connected between the power supply and the output pin. the dc supply current is 24 ma. at 900 mhz, the output third order intercept (oip3) is greater than 18 dbm; at 2.7 ghz, the oip3 is 14 dbm. the noise figure is 4.2 db at 900 mhz. the reverse isolation (s 12 ) is ?3 db at 900 mhz. the ad8354 can also operate with a 5 v power supply, in which case no external inductor is required. under these conditions, the ad8354 delivers 4.8 dbm with 20 db of gain at 900 mhz. the dc supply current is 26 ma. at 900 mhz, the oip3 is greater than 19 dbm, and at 2.7 ghz, the oip3 is 15 dbm. the noise figure is 4.4 db at 900 mhz. the reverse isolation (s 12 ) is ?3 db. the ad8354 is fabricated on analog devices?proprietary, high performance 25 ghz si complementary bipolar ic process. the ad8354 is available in a chip scale package that utilizes an exposed paddle for excellent thermal impedance and low impedance electrical connection to ground. it operates over a ?0 c to +85 c temperature range. an evaluation board is available.
rev. a e2e ad8354especifications (v s = 3 v, t a = 25 c, 100 nh external inductor between vout and vpos, z o = 50 , unless otherwise noted.) parameter conditions min typ max unit overall function frequency range 0.1 2.7 ghz gain f = 900 mhz 19.5 db f = 1.9 ghz 18.6 db f = 2.7 ghz 17.1 db delta gain f = 900 mhz, e40 c t a +85 c e0.97 db f = 1.9 ghz, e40 c t a +85 c e1.05 db f = 2.7 ghz, e40 c t a +85 c e1.33 db gain supply sensitivity vpos 10%, f = 900 mhz 0.54 db/v f = 1.9 ghz 0.37 db/v f = 2.7 ghz 0.2 db/v reverse isolation (s 12 )f = 900 mhz e33.5 db f = 1.9 ghz e38 db f = 2.7 ghz e32.9 db rf input interface pin rfin input return loss f = 900 mhz 24.4 db f = 1.9 ghz 23 db f = 2.7 ghz 12.7 db rf output interface pin vout output compression point f = 900 mhz, 1 db compression 4.6 dbm f = 1.9 ghz 3.7 dbm f = 2.7 ghz 2.7 dbm delta compression point f = 900 mhz, e40 c t a +85 c 0.7 db f = 1.9 ghz, e40 c t a +85 c 0.7 db f = 2.7 ghz, e40 c t a +85 c 0.8 db output return loss f = 900 mhz 23.6 db f = 1.9 ghz 16.5 db f = 2.7 ghz 14.6 db distortion/noise output third order intercept f = 900 mhz, f = 1 mhz, p in = e28 dbm 19 dbm f = 1.9 ghz, f = 1 mhz, p in = e28 dbm 16 dbm f = 2.7 ghz, f = 1 mhz, p in = e28 dbm 14.2 dbm output second order intercept f = 900 mhz, f = 1 mhz, p in = e28 dbm 29.7 dbm noise figure f = 900 mhz 4.2 db f = 1.9 ghz 4.8 db f = 2.7 ghz 5.4 db power interface pin vpos supply voltage 2.7 3 3.3 v total supply current 16 23 31 ma supply voltage sensitivity 6.2 ma/v temperature sensitivity e40 c t a +85 c33 a/ c specifications subject to change without notice.
rev. a ad8354 e3e specifications parameter conditions min typ max unit overall function frequency range 0.1 2.7 ghz gain f = 900 mhz 19.5 db f = 1.9 ghz 18.7 db f = 2.7 ghz 17.3 db delta gain f = 900 mhz, e40 c t a +85 c e0.93 db f = 1.9 ghz, e40 c t a +85 c e0.99 db f = 2.7 ghz, e40 c t a +85 c e1.21 db gain supply sensitivity vpos 10%, f = 900 mhz 0.32 db/v f = 1.9 ghz 0.21 db/v f = 2.7 ghz 0.08 db/v reverse isolation (s 12 )f = 900 mhz e33.5 db f = 1.9 ghz e37.6 db f = 2.7 ghz e32.9 db rf input interface pin rfin input return loss f = 900 mhz 24.4 db f = 1.9 ghz 23.9 db f = 2.7 ghz 13.5 db rf output interface pin vout output 1 db compression f = 900 mhz 4.8 dbm f = 1.9 ghz 4.6 dbm f = 2.7 ghz 3.6 dbm delta compression point f = 900 mhz, e40 c t a +85 c0.37db f = 1.9 ghz, e40 c t a +85 c e0.14 db f = 2.7 ghz, e40 c t a +85 c e0.05 db output return loss f = 900 mhz 23.7 db f = 1.9 ghz 22.5 db f = 2.7 ghz 17.6 db distortion/noise output third order intercept f = 900 mhz, f = 50 mhz, p in = e30 dbm 19.3 dbm f = 1.9 ghz, f = 50 mhz, p in = e30 dbm 17.3 dbm f = 2.7 ghz, f = 50 mhz, p in = e30 dbm 15.3 dbm output second order intercept f = 900 mhz, f = 1 mhz, p in = e28 dbm 28.7 dbm noise figure f = 900 mhz 4.4 db f = 1.9 ghz 5 db f = 2.7 ghz 5.6 db power interface pin vpos supply voltage 4.5 5 5.5 v total supply current t a = 27 c172 534ma supply voltage sensitivity 4 ma/v temperature sensitivity e40 c t a +85 c28 a/ c specifications subject to change without notice. (v s = 5 v, t a = 25 c, no external inductor between vout and vpos, z o = 50 , unless otherwise noted.)
rev. a e4e ad8354 caution esd (electrostatic discharge) sensitive device. electrostatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge without detection. although the ad8354 features proprietary esd protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. therefore, proper esd precautions are recommended to avoid performance degradation or loss of functionality. absolute maximum ratings * supply voltage vpos . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 v input power (re: 50 ) . . . . . . . . . . . . . . . . . . . . . . . . 10 dbm equivalent voltage . . . . . . . . . . . . . . . . . . . . . . 700 mv rms internal power dissipation paddle not soldered . . . . . . . . . . . . . . . . . . . . . . . . 325 mw paddle soldered . . . . . . . . . . . . . . . . . . . . . . . . . . . 812 mw ja (paddle not soldered) . . . . . . . . . . . . . . . . . . . . . 200 c/w ja (paddle soldered) . . . . . . . . . . . . . . . . . . . . . . . . . . 80 c/w maximum junction temperature . . . . . . . . . . . . . . . . . 150 c operating temperature range . . . . . . . . . . . e40 c to +85 c storage temperature range . . . . . . . . . . . . e65 c to +150 c lead temperature range (soldering, 60 sec) . . . . . . . . 240 c * stresses above those listed under absolute maximum ratings may cause perma- nent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. pin configuration top view (not to scale) 8 1 nc = no connect com1 nc inpt com1 vout vpos com2 com2 ad8354 2 3 4 7 6 5 ordering guide temperature package package model range description option branding AD8354ACP-R2 e40 c to +85 c 8-lead lfcsp cp-8 jca ad8354acp-reel7 e40 c to +85 c 8-lead lfcsp cp-8 jca ad8354-eval evaluation board pin function descriptions pin no. mnemonic description 1, 8 com1 device common. connect to low impedance ground. 2n cn o connection. 3i npt rf input connection. must be ac-coupled. 4, 5 com2 device common. connect to low impedance ground. 6 vpos positive supply voltage. 7 vout rf output connection. must be ac-coupled.
rev. a t ypical performance characteristicsead8354 e5e 180 150 120 90 60 30 0 330 300 270 240 210 tpc 1. s 11 vs. frequency, v s = 3 v, t a = 25 c, 100 mhz f 3.0 ghz frequency (mhz) 0 0 3000 gain (db) 1000 1500 2000 2500 25 20 15 gain at 3.0v gain at 3.3v gain at 2.7v 10 5 500 tpc 2. gain vs. frequency, v s = 2.7 v, 3.0 v, and 3.3 v, t a = 25 c frequency (mhz) e40 500 reverse isolation (db) 1000 e15 e20 e25 e30 e35 s 12 at 3.0v s 12 at 3.3v s 12 at 2.7v 1500 2000 2500 3000 e10 e5 0 0 tpc 3. reverse isolation vs. frequency, v s = 2.7 v, 3 v, and 3.3 v, t a = 25 c 180 150 120 90 60 30 0 330 300 270 240 210 tpc 4. s 22 vs. frequency, v s = 3 v, t a = 25 c, 100 mhz f 3.0 ghz frequency (mhz) 0 500 gain (db) 1000 25 20 15 10 5 gain at e40 c gain at +85 c gain at +25 c 1500 2000 2500 3000 0 tpc 5. gain vs. frequency, v s = 3 v, t a = e40 c, +25 c, and +85 c frequency (mhz) e40 500 reverse isolation (db) 1000 e15 e20 e25 e30 e35 s 12 at e40 c 1500 2000 2500 3000 e10 e5 0 s 12 at +25 c s 12 at +85 c 0 tpc 6. reverse isolation vs. frequency, v s = 3 v, t a = e40 c, +25 c, and +85 c
rev. a e6e ad8354 frequency (mhz) e1 500 1000 1500 2000 2500 3000 p 1 db (dbm ) 4 3 2 1 0 p 1 db at 3.3v 5 6 7 p 1 db at 3.0v p 1 db at 2.7v 0 tpc 7. p 1 db vs. frequency, v s = 2.7 v, 3 v, and 3.3 v, t a = 27 c output 1db compression point (dbm) 0 2.5 percentage 2.6 25 20 15 10 5 30 35 40 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 45 50 tpc 8. distribution of p 1 db , v s = 3 v, t a = 25 c, f = 2.2 ghz frequency (mhz) 10 500 oip3 (dbm) 1000 20 18 16 14 12 oip3 at 3.3v 1500 2000 2500 3000 22 oip3 at 3.0v oip3 at 2.7v 0 tpc 9. oip3 vs. frequency, v s = 2.7 v, 3 v, and 3.3 v, t a = 25 c frequency (mhz) 500 p 1 db (dbm) 4 3 2 1 0 p 1 db at e40 c 5 6 p 1 db at +25 c p 1 db at +85 c 1000 1500 2000 2500 3000 0 tpc 10. p 1 db vs. frequency, v s = 3 v, t a = e40 c, +27 c, and +85 c oip3 (dbm) 0 14.4 percentage 25 20 15 10 5 30 35 40 45 50 14.6 14.8 15.0 15.2 15.4 15.6 15.8 16.0 tpc 11. distribution of oip3, v s = 3 v, t a = 25 c, f = 2.2 ghz frequency (mhz) 10 500 oip3 (dbm) 20 18 16 14 12 1500 2000 2500 3000 22 1000 oip3 at +85 c oip3 at e40 c oip3 at +25 c 0 tpc 12. oip3 vs. frequency, v s = 3 v, t a = e40 c, +25 c, and +85 c
rev. a ad8354 e7e frequency (mhz) 4.0 500 noise figure (db) 1000 nf at 3.3v nf at 3.0v nf at 2.7v 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 2000 2500 1500 3000 0 tpc 13. noise figure vs. frequency, v s = 2.7 v, 3 v, and 3.3 v, t a = 25 c noise figure (db) 0 4.70 percentage 25 20 15 10 5 30 35 40 4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 tpc 14. distribution of noise figure, v s = 3 v, t a = 25 c, f = 2.2 ghz 180 150 120 90 60 30 0 330 300 270 240 210 tpc 15. s 11 vs. frequency, v s = 5 v, t a = 25 c, 100 mhz f 3 ghz frequency (mhz) 3.0 500 noise figure (db) 1500 nf at e40 c 3.5 4.0 4.5 5.0 5.5 6.5 6.0 nf at +25 c nf at +85 c 1000 2500 2000 3000 0 tpc 16. noise figure vs. frequency, v s = 3 v, t a = e40 c, +25 c, and +85 c temperature ( c) 0 e60 supply current (ma) 5 10 15 20 25 30 i s at 3.0v i s at 3.3v i s at 2.7v e40 e20 0 20 40 60 80 100 tpc 17. supply current vs. temperature, v s = 2.7 v, 3 v, and 3.3 v 180 150 120 90 60 30 0 330 300 270 240 210 tpc 18. s 22 vs. frequency, v s = 5 v, t a = 25 c, 100 mhz f 3 ghz
rev. a e8e ad8354 frequency (mhz) 500 3000 gain (db) 1000 1500 2000 2500 25 5 0 10 15 20 gain at 5.0v gain at 4.5v gain at 5.5v 0 tpc 19. gain vs. frequency, v s = 4.5 v, 5.0 v, and 5.5 v, t a = 25 c frequency (mhz) e40 500 reverse isolation (db) 1000 s 12 at 5.0v s 12 at 4.5v s 12 at 5.5v e35 e30 e25 e20 e15 e10 e5 0 1500 2000 2500 3000 0 tpc 20. reverse isolation vs. frequency, v s = 4.5 v, 5 v, and 5.5 v, t a = 25 c 0 p 1 db (dbm) p 1 db at 5.0v 1 2 3 4 5 6 7 p 1 db at 4.5v p 1 db at 5.5v frequency (mhz) 500 1000 1500 2000 2500 3000 0 tpc 21. p 1 db vs. frequency, v s = 4.5 v, 5 v, and 5.5 v, t a = 25 c frequency (mhz) 0 500 gain (db) 25 20 15 10 5 gain at e40 c gain at +25 c gain at +85 c 1500 2000 2500 3000 0 1000 tpc 22. gain vs. frequency, v s = 5 v, t a = e40 c, +25 c, and +85 c frequency (mhz) 500 reverse isolation (db) s 12 at e40 c e30 e25 e20 e15 e10 e5 0 s 12 at +85 c 1000 1500 2000 2500 3000 0 s 12 at +25 c e35 e40 tpc 23. reverse isolation vs. frequency, v s = 5 v, t a = e40 c, +25 c, and +85 c 0 p 1 db (dbm) 1 2 3 4 5 6 p 1 db at e40 c p 1 db at +85 c p 1 db at +25 c frequency (mhz) 500 1000 1500 2000 2500 3000 0 tpc 24. p 1 db vs. frequency, v s = 5 v, t a = e40 c, +25 c, and +85 c
rev. a ad8354 e9e output 1 db compression point (dbm) 0 3.95 percentage 4.00 25 20 15 10 5 30 35 40 45 50 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 tpc 25. distribution of p 1 db , v s = 5 v, t a = 25 c, f = 2.2 ghz 10 12 14 16 18 20 22 oip3 at 5.5v oip3 at 5.0v oip3 at 4.5v frequency (mhz) 500 1000 1500 2000 2500 3000 0 oip3 (dbm) tpc 26. oip3 vs. frequency, v s = 4.5 v, 5 v, and 5.5 v, t a = 25 c frequency (mhz) 4.0 500 noise figure (db) 1000 nf at 4.5v nf at 5.5v nf at 5.0v 4.5 5.0 6.0 1500 2000 2500 3000 6.5 5.5 7.0 0 tpc 27. noise figure vs. frequency, v s = 4.5 v, 5 v, and 5.5 v, t a = 25 c oip3 (dbm) 0 16.0 percentage 25 20 15 10 5 30 35 16.1 16.2 16.3 16.4 16.5 16.6 16.7 16.8 16.9 17.0 17.1 17.2 tpc 28. distribution of oip3, v s = 5 v, t a = 25 c, f = 2.2 ghz 10 oip3 (dbm) 12 14 16 18 20 22 oip3 at e40 c oip3 at +25 c oip3 at +85 c frequency (mhz) 1000 1500 2000 2500 3000 500 0 tpc 29. oip3 vs. frequency, v s = 5 v, t a = e40 c, +25 c, and +85 c frequency (mhz) 4.0 500 noise figure (db) 1000 nf at e40 c 4.5 5.0 6.0 1500 2000 2500 3000 6.5 5.5 7.0 7.5 3.0 3.5 nf at +85 c nf at +25 c 0 tpc 30. noise figure vs. frequency, v s = 5 v, t a = e40 c, +25 c, and +85 c
rev. a e10e ad8354 noise figure ( db ) 0 4.5 percentage 25 20 15 10 5 30 35 40 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 tpc 31. distribution of noise figure, v s = 5 v, t a = 25 c, f = 2.2 ghz temperature ( c) 0 e60 supply current (ma) 5 10 15 20 25 30 i s at 5.0v i s at 5.5v i s at 4.5v e40 e20 0 20 40 60 80 100 35 tpc 32. supply current vs. temperature, v s = 4.5 v, 5 v, and 5.5 v p in (dbm) 15 e15 e30 e25 p out (dbm) e20 e15 e10 e5 0 10 5 0 e5 e10 20 14 19 18 17 16 15 gain (db) tpc 33. output power and gain vs. input power, v s = 3 v, t a = 25 c, f = 900 mhz p in (dbm) e30 e25 e20 e15 e10 e5 0 e15 p out (dbm) 10 5 0 e10 20 14 19 18 17 16 15 gain (db) e5 15 tpc 34. output power and gain vs. input power, v s = 5 v, t a = 25 c, f = 900 mhz
rev. a ad8354 e11e theory of operation the ad8354 is a two-stage feedback amplifier employing both shunt-series and shunt-shunt feedback. the first stage is degen- erated and resistively loaded, and provides approximately 10 db of gain. the second stage is a pnp-npn darlington output stage, which provides another 10 db of gain. series-shunt feed- back from the emitter of the output transistor sets the input impedance to 50 over a broad frequency range. shunt-shunt feedback from the amplifier output to the input of the d arlington stage helps to set the output impedance to 50 . the amplifier can be operated from a 3 v supply by adding a choke inductor from the amplifier output to vpos. without this choke induc tor, operation from a 5 v supply is also possible. basic connections the ad8354 rf gain block is a fixed-gain amplifier with single- ended input and output ports whose impedances are nominally equal to 50 over the frequency range 100 mhz to 2.7 ghz. consequently, it can be directly inserted into a 50 system with no impedance matching circuitry required. the input and output impedances are sufficiently stable versus variations in temperature and supply voltage that no impedance matching compensation is required. a complete set of scattering param eters is available at the analog devices website (www.analog.com). the input pin (inpt) is connected directly to the base of the first amplifier stage, which is internally biased to approximately 1 v, so a dc-blocking capacitor should be connected between the source that drives the ad8354 and the input pin, inpt. it is critical to supply very low inductance ground connections to the ground pins (pins 1, 4, 5, and 8) as well as to the back- side exposed paddle. this will ensure stable operation. the ad8354 is designed to operate over a wide supply voltage range from 2.7 v to 5.5 v. the output of the part, vout, is taken directly from the collector of the output amplifier stage. this node is internally biased to approximately 3.2 v when the supply voltage is 5 v. consequently, a dc-blocking capacitor should be connected between the output pin, vout, and the load that it drives. the value of this capacitor is not critical, but it should be 100 pf or larger. when the supply voltage is 3 v, it is recommended that an external rf choke be connected between the supply voltage and the output pin, vout. this will increase the dc voltage applied to the collector of the output amplifier stage, which will improve performance of the ad8354 to be very similar to the perfor- mance produced when 5 v is used for the supply voltage. the inductance of the rf choke should be approximately 100 nh. care should be taken to ensure that the lowest series self-resonant frequency of this choke is well above the maximum frequency of operation for the ad8354. the supply voltage input, vpos, should be bypassed using a large value capacitance (approximately 0.47 f or larger) and a sm aller, high frequency bypass capacitor (approximately 100 pf) physi- cally located close to the vpos pin. the recommended connections and components are shown in the schematic of the ad8354 evaluation board (figure 3). applications the ad8354 rf gain block may be used as a general-purpose fixed-gain amplifier in a wide variety of applications, such as a driver for a transmitter power amplifier (figure 1). its excellent reverse isolation also makes this amplifier suitable for use as a local oscillator buffer amplifier that would drive the local oscilla- tor port of an up or down converter mixer (figure 2). ad8354 high power amplifier figure 1. ad8354 as a driver amplifier mixer ad8354 local oscillator figure 2. ad8354 as a lo driver amplifier nc = no connect com1 nc inpt com1 v out vpos com2 com2 ad8354 c3 100pf c4 0.47 f vp output 1 2 3 45 6 7 8 c2 1000pf c1 1000pf input l1 figure 3. evaluation board schematic evaluation board figure 3 shows the schematic of the ad8354 evaluation board. note that l1 is shown as an optional component, which is used to obtain maximum gain only when v p = 3 v. the board is powered by a single supply in the 2.7 v to 5.5 v range. the power supply is decoupled by 0.47 f and 100 pf capacitors. table i. evaluation board configuration options component function default value c1, c2 ac coupling capacitors. 1000 pf, 0603 c3 high frequency bypass capacitor. 100 pf, 0603 c4 low frequency bypass capacitor. 0.47 f, 0603 l1 optional rf choke. used to increase current through output stage when v p = 3 v. not recommended for use when v p = 5 v. 100 nh, 0603
rev. a e12e ad8354 figure 4. silkscreen top figure 5. component side
rev. a ad8354 ?3 outline dimensions 8-lead lead frame chip scale package [lfcsp] 2mm x 3 mm body (cp-8) dimensions shown in millimeters 0.30 0.23 0.18 seating plane 12 0 0.20 ref 0.80 max 0.65 nom 1.00 0.90 0.80 0.05 0.02 0.00 1.89 1.74 1.59 0.50 bsc 0.60 0.45 0.30 0.55 0.40 0.30 0.15 0.10 0.05 0.25 0.20 0.15 bottom view 4 58 1 3.25 3.00 2.75 1.95 1.75 1.55 2.95 2.75 2.55 pin 1 indicator 2.25 2.00 1.75 notes 1. controlling dimensions are in millimeters. 2. paddle is copper plated with lead finish.
rev. a e14e ad8354 revision history location page 6/02?data sheet changed from rev. 0 to rev. a. change to ordering giuide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 replaced tpc 34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 updated outline dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
e15e
c02722e0e6/03(a) e16e

▲Up To Search▲

Price & Availability of AD8354ACP-R2

	To Download AD8354ACP-R2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .